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FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack

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FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack

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Brand Name : FUJI

price : Competitive

Model Number : 2MB1300VN-170-50

Collector-Emitter voltage : 1200 V

Gate-Emitter voltage : ±20 V

Collector power dissipation : 1595 W

Storage temperature : -40 to +125°C

Isolation voltage : 2500 VAC

Screw torque : 3.5-4.5 Nm

Zero gate voltage collector current : 3.0mA

Gate-Emitterleakage current : 600nA

Gate-Emitter threshold voltage : 6.0-7.0 V

Payment Terms : T/T

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Product Description:

The FUJI 2MB1300VN-170-50 IGBT Module is a high-performance power module designed for various industrial applications. With its advanced Insulated Gate Bipolar Transistor (IGBT) technology, this module offers exceptional power handling capabilities and efficient switching performance.

Featuring a voltage rating of 1700V and a current rating of 1300A, the FUJI 2MB1300VN-170-50 IGBT Module is capable of handling high-power applications with ease. Its robust construction and reliable design ensure optimal performance even in demanding operating conditions.

This IGBT module is equipped with built-in protection features such as short circuit protection and over-temperature protection, which help safeguard the module and the connected devices from potential damage. Additionally, it offers low switching losses and high thermal conductivity, resulting in improved efficiency and reduced power dissipation.

The compact and modular design of the FUJI 2MB1300VN-170-50 IGBT Module allows for easy integration into various power electronic systems. It is suitable for use in motor drives, renewable energy systems, industrial automation, and other applications that require high-power switching capabilities.

With its exceptional performance, reliability, and comprehensive protection features, the FUJI 2MB1300VN-170-50 IGBT Module provides an ideal solution for demanding industrial applications that require efficient power handling and precise control.

FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack

FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack

FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack

FUJI 2MB1300VN-170-50 IGBT Module 1200V 1595W 300A 2 pack


Product Tags:

igbt insulated gate bipolar transistor

      

insulated gate bipolar transistor Through Hole

      

igbt Bipolar Transistor

      
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